Published/Posted: October 1, 2015

Authors: Mittendorff, M.; Li, S.; Murphy, T. E.

DOI: 10.1364/FIO.2015.FTh4B.5

Abstract: We present a broadband THz modulator based on a silicon waveguide with a graphene sheet on top. The Fermi energy, and therefore the intraband absorption in the graphene, is modulated via a back gate.

M. Mittendorff, S. Li and T. E. Murphy, "Silicon-Integrated Graphene-Based THz Modulator", Frontiers in Optics (FiO), San Jose, CA (USA) FTh4B.5 (2015)